uv METALLIZATION

The 9 vacuum metallization lines (7 PVD and 2 Sputtering) are designed for efficiency and quality to guarantee the best value for money for our customers.

The latest generation of metallising machines with “Sputtering” technology has enabled Cosmelux to completely unite the painting and metallising processes.

the BENEFITS

Production capacity

Production capacity for standard size parts: 2,000,000 parts per day.

Type of negotiable parts

Diameter: 5 - 120 mm | Height: 5 - 140 mm
Materials: PP, ABS, PCTA, PE, PETG, PS, SAN, Alu, glass, Surlyn

Company Certifications

DIN ISO 9001:2015

pvd | Thermal evaporation plants

In the field of decorative metallisation, the adoption of thermal evaporation systems is still the most widespread system today due to its simplicity of use and its deposition efficiency in the presence of substrates with very complicated geometries.

The deposition source consists of tungsten resistors, generally placed in the centre of the process chamber, on which the wire of the metal to be deposited is placed. Substrates are positioned around the resistors and are rotated (rotation and translation) during the metal deposition phase.

In order to achieve metal deposition within the process chamber, it is necessary to reach a vacuum level generally higher than 4×10-4 mbar (high vacuum). Once the necessary vacuum level is reached, the actual evaporation phase begins, which consists of heating the tungsten heating elements, which are made incandescent and melt the metal, which evaporates and condenses on the surface of the substrate.

pvd | Sputtering

A modern, fast and inexpensive metal deposition system originally used only on substrates with flat surfaces, it is now increasingly used on three-dimensional objects as well, even with simple geometries.

In sputtering technology, the deposition source is a magnetic cathode on which a metal plate (target) of the desired material is placed.

The magnetic cathode is generally placed at the side of the process chamber. The substrates rotate in front of the deposition source. When the desired vacuum level is reached, a high voltage is applied and Argon is injected.

The positive Argon ions undergo an acceleration process on the negative cathode and subsequently eject the atoms from the metal plate. These atoms then condense on the substrates.

our
REALISATIONS

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